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What is 2SK3261 N-Channel MOSFET Specifications about?

This document provides specifications for the 2SK3261 N-Channel MOSFET transistor. It is intended for very high-speed switching applications. The device offers low ON-state resistance and low gate charge for fast switching. Key specifications include a drain-source breakdown voltage of 900V, ON resistance of 1.4 ohm at 5A of drain current, and total gate charge of 88 nC. Switching time tests show rise and fall times of 63 ns and 73 ns respectively under specified conditions. The transistor comes in a TO-3PM

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drivercompu2169

Language

EN