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Can I read A Novel Nonvolatile Memory Based on Self-organized Quantum Dots on EtoBox?
A Novel Nonvolatile Memory Based on Self-organized Quantum Dots by A. Marent; M. Geller; D. Bimberg is a Engineering article available to read on EtoBox.
What is A Novel Nonvolatile Memory Based on Self-organized Quantum Dots about?
A novel type of memory based on self-organized quantum dots (QDs) is presented, which merges the advantages of the most important semiconductor memories, the dynamic random access memory (DRAM) and the Flash. A nonvolatile memory with fast access times ðo10 nsÞ and good endurance (410 15 write/erase cycles) as an ultimate solution seems possible. A storage time of 1.6 s at 300 K in InAs=GaAs QDs with an additional Al 0:9 Ga 0:1 As barrier is demonstrated and a retention time of 10 6 years is predicted for GaSb QDs in an AlAs matrix. A minimum write time of 6 ns is obtained for InAs/GaAs QDs. This value is already in the order of the access time of a DRAM cell and at the moment limited by the RC low pass of the device. An erase time of milliseconds is shown in first measurements on GaSb=GaAs QDs at 100 K. Faster write/erase times below 1 ns even at room temperature are expected for improved device structures.
Who reads A Novel Nonvolatile Memory Based on Self-organized Quantum Dots?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. Marent; M. Geller; D. Bimberg
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)