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Adapting GMR sensors for integrated devices by K. Ludwig; J. Hauch; R. Mattheis; K.-U. Barholz; G. Rieger is a Engineering article available to read on EtoBox.

What is Adapting GMR sensors for integrated devices about?

Magnetoelectronic devices like current sensors or magnetocouplers which integrate the signal generator and the sensor element on one substrate represent an area of major commercial importance for GMR sensors. Due to their intrinsic properties exchange biased GMR spin valves [Phys. Rev. B 42 (1990) 10583] [1] are particularly well suited for these devices. However, the adaptation of the spin valve sensors to such applications is difficult, since only the low field part of the signal characteristic is utilized, which is sensitive to the composition of the GMR stack as well as domain structure. While a large amount of research has focused on the influence of layer composition on the properties of GMR sensors [Annu. Rev. Mater. Sci. 25 (1995) 357] [2], little is known about the effect of sensor geometry, which influences the domain structure of the sensing layer. In this paper, we introduce the design of an integrated magnetocoupler device and examine the influence of geometry on sensor properties in a design suitable to magnetic field detection.

Who reads Adapting GMR sensors for integrated devices?

Author

K. Ludwig; J. Hauch; R. Mattheis; K.-U. Barholz; G. Rieger

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0924-4247)

Published

2003

Language

EN

Field

Engineering (Physical Sciences)