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About this Engineering article
Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells by Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2012
- Language
- EN
- Field
- Engineering (Physical Sciences)
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