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About this Physics and Astronomy article
Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(1 1 1) substrate by metalorganic vapor phase epitaxy by G.M. Wu; Y.L. Kao is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- G.M. Wu; Y.L. Kao
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 2007
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)