Opening book details…
About this Engineering article
Interstitial-type Defects Away from the Projected Ion Range in High Energy Ion Implanted and Annealed Silicon by Kögler, R.; Peeva, A.; Anwand, W.; Brauer, G.; Skorupa, W.; Werner, P.; Gösele, U. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kögler, R.; Peeva, A.; Anwand, W.; Brauer, G.; Skorupa, W.; Werner, P.; Gösele, U.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1999
- Field
- Engineering (Physical Sciences)