About this scholarly article

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) - The effect of gate oxide thickness and drain bias on NBTI degradation in 45nm PMOS by Hatta, S. F. Wan Muhamad; Soin, N.; Zhang, J. F. is a scholarly article available to read on EtoBox.

Author

Hatta, S. F. Wan Muhamad; Soin, N.; Zhang, J. F.

Publisher

IEEE

Published

2010