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Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process by K. Matsushita; K. Shigenaka; A. Kamata is a Engineering article available to read on EtoBox.
What is Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process about?
The electrical characteristics of as-grown epitaxial HgCdTe layers grown by metalorganic chemical vapor deposition were investigated. We propose a new cap layer in order to obtain as-grown HgCdTe layers with low p-type carrier concentration. The new cap layer called the "double-cap layer" consists of a graded Cd content Hg, -,Cd,Te layer with x = 0.24.7 and a CdTe cap layer which was continuously grown at low temperature on the graded HgCdTe layer. The carrier concentration of HgCdTe layers with the new cap layer was about 3 x 1Or6 cm-3. The p-type carrier concentration has been reduced further to 2 x 1015 cm-3 (for x = 0.22) by lowering the growth temperature and increasing the partial pressure of Hg. This carrier concentration is lower than the estimated Hg vacancy concentration from considerations of the thermal equilibrium conditions.
Who reads Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- K. Matsushita; K. Shigenaka; A. Kamata
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)