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This study investigates the enhancement of carrier mobility in a strained SiGe quantum well by using high-κ dielectrics, revealing significant increases in mobility at low temperatures and varying effects at room temperature. The findings indicate that a dielectric coating can improve mobility from 1600 cm²/V·s to 12300 cm²/V·s at low temperatures, while at room temperature, the increase is from 760 cm²/V·s to 970 cm²/V·s. The research highlights the importance of considering dielectric mismatch in charge t

Author

aeroltes

Language

EN