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Investigation of Thin-Barrier AlGaN/GaN HEMT Heterostructures for Enhanced Gas-Sensing Performance by Akhil Ranjan; Ravikiran Lingaparthi; Nethaji Dharmarasu; Radhakrishnan K. is a Engineering article available to read on EtoBox.

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In this study, a theoretical relationship between two-dimensional electron gas (2DEG) properties of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructure and various gas-sensing characteristics using this structure was established. Based on the analytical study, it is proposed that a thinner barrier layer in AlGaN/GaN HEMT heterostructure should result in lower detection limits, higher sensing response, and a faster response time. To prove the analytical study, a thin-barrier (∼8 nm) AlGaN/GaN HEMT structure was designed and grown to study its sensing characteristics. The results are compared with the thick-barrier (∼18 nm) gas sensor structure. For the thin-barrier NO 2 sensor, the sensing response increased by almost ten times when I was changed by more than 25%. The sensor also showed a faster response time of 10 s when compared to the thick barrier sensor. Similarly, the thin-barrier NH 3 sensor showed a remarkable improvement in sensing response by 17 times and I by two times. Based on the response time, the thin-barrier NH 3 sensor was also found to be 40% more faster compared to the thick-barrier AlGaN/GaN HEMT sensor. 18 19 Index Terms-AlGaN/GaN high-electron-m

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Author

Akhil Ranjan; Ravikiran Lingaparthi; Nethaji Dharmarasu; Radhakrishnan K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published

2022

Language

EN

Field

Engineering (Physical Sciences)