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Single-Crystalline Dielectrics for 2D FETs by ghe608270 is a document available to read on EtoBox.
What is Single-Crystalline Dielectrics for 2D FETs about?
The article discusses the development of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality dielectric for top-gate 2D transistors, specifically MoS2 FETs. This c-Al2O3 layer, achieved through intercalative oxidation, demonstrates excellent electrical properties, including low gate leakage current and high dielectric strength, meeting the International Roadmap for Devices and Systems requirements. The research highlights the potential for scalable production of high-quality dielectrics for
- Author
- ghe608270
- Language
- EN