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About this Engineering article
Si ion-induced instability in flatband Voltage of Si+-implanted gate oxides by Ng, C.Y.; Chen, T.P.; Ding, L.; Chen, Q.; Liu, Y.; Zhao, P.; Tseng, A.A.; Fung, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ng, C.Y.; Chen, T.P.; Ding, L.; Chen, Q.; Liu, Y.; Zhao, P.; Tseng, A.A.; Fung, S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)