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This document provides specifications and characteristics for the Toshiba 2SK3568 N-channel MOSFET transistor. Key details include: - It has a low drain-source ON resistance of 0.4 ohms and high forward transfer admittance of 8.5S. - Absolute maximum ratings include a drain-source voltage of 500V and drain current of 12A. - Electrical characteristics at 25°C include a gate threshold voltage of 2.0-4.0V and drain cut-off current of 100uA. - Graphs illustrate characteristics such as drain current vs drain-so

Author

Angel De Dios Roso

Language

EN