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Can I read NSbTe heat-mode resist possessing both positive and negative lithographic characteristics on EtoBox?
NSbTe heat-mode resist possessing both positive and negative lithographic characteristics by Wancheng Shen; Lei Chen; Ying Wang; Tao Wei; Jing Hu; Qianqian Liu; Miao Cheng; Wanfei Li; Yun Ling; Bo Liu is a Materials Science article available to read on EtoBox.
What is NSbTe heat-mode resist possessing both positive and negative lithographic characteristics about?
We report NSbTe resist with both positive and negative characteristics via tuning N concentration. It is found that N0.9Sb2.3Te acts as a negative resist with the development selectivity of 8.0, while N1.2Sb2.2Te acts as a positive resist with the development selectivity of 6.4. Moreover, the minimum linewidths reach 150 nm in N0.9Sb2.3Te whereas 330 nm in N1.2Sb2.2Te resist. The etching selectivity of Si to N0.9Sb2.3Te reaches 74 while that of Si to N1.2Sb2.2Te is 55. Thus, NSbTe thin film has great potential for both negative and positive lithography.
Who reads NSbTe heat-mode resist possessing both positive and negative lithographic characteristics?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Wancheng Shen; Lei Chen; Ying Wang; Tao Wei; Jing Hu; Qianqian Liu; Miao Cheng; Wanfei Li; Yun Ling; Bo Liu
- Publisher
- Elsevier BV
- Published
- 2022
- Language
- EN
- Field
- Materials Science (Physical Sciences)