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This article discusses the design and testing of a 600-Watt RF laser driver using LDMOS transistors, highlighting their advantages over traditional MOSFETs. It details the performance specifications, circuit design, and challenges related to drain voltage excursions, as well as the importance of stability and protection in RF power amplifiers. The article concludes that LDMOS transistors offer superior power dissipation, gain, and linearity, making them suitable for laser driver applications despite some li

Author

土人

Language

EN