About this Engineering article
Characteristics of p-Ge/N-GaAs heterojunctions grown by molecular beam epitaxy by Ünlü, M.S.; Strite, S.; Won, T.; Adomi, K.; Chen, J.; Noor Mohammad, S.; Biswas, D.; Morkoç, H. is a Engineering article available to read on EtoBox.
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- Author
- Ünlü, M.S.; Strite, S.; Won, T.; Adomi, K.; Chen, J.; Noor Mohammad, S.; Biswas, D.; Morkoç, H.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1989
- Language
- EN
- Field
- Engineering (Physical Sciences)