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About this Engineering article
4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400oC by Naik, Harsh; Chow, T. Paul is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Naik, Harsh; Chow, T. Paul
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)