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Half-Micron Ferroelectric Memory Cell by yongyuyythu is a document available to read on EtoBox.
This document presents a half-micron ferroelectric memory cell technology suitable for Mega-bit non-volatile memories, detailing the fabrication process and technologies used to achieve a 1Transistor/1Capacitor cell with a stacked capacitor structure. The developed memory cell meets the requirements for 4M NVDRAM operation, with a capacitance above 50fF at a size of 10.5pm². Key advancements include the use of planalization, dry etching, and diffusion barrier technologies to enhance capacitor performance an
- Author
- yongyuyythu
- Language
- EN