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What is Narrow-Channel Effects in STI MOSFETs about?

This paper reviews the effects of narrow-channel behavior in shallow trench isolation (STI) MOSFETs, highlighting the differences between surface-channel and buried-channel cases. Surface-channel STI MOSFETs exhibit an inverse narrow-channel effect (INCE) where the threshold voltage decreases with channel width, while buried-channel devices show a conventional narrow-channel effect (NCE) with an increase in threshold voltage. The authors discuss the implications of these phenomena and potential countermeasu

Author

dhsilvery

Language

EN