About this Engineering article
Fabrication of High Performance Pentacene Thin Film Transistors Using Poly(4-vinylphenol) as the Gate Insulator on Polyethyleneterephthalate Substrates by Hyun Sook Byun; Yong-Xian Xu; Chung Kun Song is a Engineering article available to read on EtoBox.
Pentacene thin film transistors (TFTs) were fabricated by using poly(4-vinylphenol) as the gate insulator and pentacene as the organic semiconductor on polyethyleneterephthalate substrates. The TFTs were characterized and the following parameters were obtained: a mobility of 0.8 cm 2 /V s T 0.2 cm 2 /V s, an on / off current ratio of 10 6 and a subthreshold slope of 1.0 V/dec. Inverter circuits based on the organic TFTs exhibited transfer curves typical of inverters with gains of 9.7 and a little hysteresis, which is indicative of a small number of interface states.
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- Author
- Hyun Sook Byun; Yong-Xian Xu; Chung Kun Song
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)