About this scholarly article

2010 14th International Workshop on Computational Electronics - Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study by Martinez, A.; Asenov, A.; Aldegunde, M. is a scholarly article available to read on EtoBox.

Author

Martinez, A.; Asenov, A.; Aldegunde, M.

Publisher

IEEE

Published

2010