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This document describes how to experimentally determine the static characteristics of a power MOSFET, including its output characteristics (drain current ID vs drain-source voltage VDS for different gate-source voltages VGS) and transfer characteristics (drain current ID vs gate-source voltage VGS at a constant drain-source voltage VDS). Protections like heat sinks, snubber circuits, and fuses are provided. Connections to a MOSFET characteristics study unit are made to supply voltages and measure currents/v

Author

Manikandan P Engineering EEE

Language

EN