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Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs by S. Wicaksono; S.F. Yoon; K.H. Tan; W.K. Cheah is a Engineering article available to read on EtoBox.

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GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a antimony cracker source, we will demonstrate closely lattice-matched condition of GaAsSbN/GaAs with lattice mismatch o1000 ppm. Closely lattice-matched GaAsSbN/GaAs samples were obtained which showed room temperature and 4 K photoluminescence emission at $1300 nm, with N and Sb concentration of $2.3% and $7%, respectively. Competitive incorporation of Sb and N was observed, as the presence of Sb promotes N incorporation. This competition enhances Sb-surfactant effect observed in GaAsSbN layer grown with a slight compressive strain.

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Author

S. Wicaksono; S.F. Yoon; K.H. Tan; W.K. Cheah

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)