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About this Engineering article
Electrical Properties of Fluorine-doped Silicon-oxycarbide Dielectric Barrier for Copper Interconnect by C. Huang; J. Huang; Y. Wang; J. Chang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C. Huang; J. Huang; Y. Wang; J. Chang
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 2006
- Field
- Engineering (Physical Sciences)