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IGBT Overview: Construction and Operation by Nishant Saxena is a document available to read on EtoBox.
1) IGBTs were developed to combine the low on-state resistance of BJTs and the gate control of MOSFETs. They have superior on-state characteristics, good switching speed, and safe operating area compared to BJTs and MOSFETs. 2) An IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latchup. It consists of a MOSFET, p-n-p BJT, and n-p-n BJT in a Darlington configuration. 3) In the on-state, gate voltage forms an inversion channel that shorts emitter and collector, causing
- Author
- Nishant Saxena
- Language
- EN