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About this Physics and Astronomy article
Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations by Lü, Wei-Feng; Wang, Guang-Yi; Lin, Mi; Sun, Ling-Ling is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Lü, Wei-Feng; Wang, Guang-Yi; Lin, Mi; Sun, Ling-Ling
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0256-307X)
- Published
- 2015
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
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