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About this Engineering article
Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar + ion implantation using oil-immersion Raman spectroscopy by Yamamoto, Shotaro; Kosemura, Daisuke; Takeuchi, Kazuma; Ishihara, Seiya; Sawano, Kentarou; Nohira, Hiroshi; Ogura, Atsushi is a Engineering article available to read on EtoBox.
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- Author
- Yamamoto, Shotaro; Kosemura, Daisuke; Takeuchi, Kazuma; Ishihara, Seiya; Sawano, Kentarou; Nohira, Hiroshi; Ogura, Atsushi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2017
- Language
- EN
- Field
- Engineering (Physical Sciences)