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What is SiO2 Layer Enhances Germanium Photodetectors about?

The study investigates the impact of a SiO2 anti-reflection layer on the optoelectronic properties of germanium metal-semiconductor-metal photodetectors. A 260 nm-thick SiO2 layer significantly reduced reflectance to 15.6% at 1550 nm, enhancing the photodetector

Author

joshua25clark

Language

EN