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About this Engineering article
High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process by Liu, Xinke; Bhuiyan, Maruf Amin; Somasuntharam, Pannirselvam S/O; Soh, Chew Beng; Liu, Zhihong; Chi, Dong Zhi; Liu, Wei; Lu, Youming; Yu, Wenjie; Tan, Leng Seow; Yeo, Yee-Chia is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Liu, Xinke; Bhuiyan, Maruf Amin; Somasuntharam, Pannirselvam S/O; Soh, Chew Beng; Liu, Zhihong; Chi, Dong Zhi; Liu, Wei; Lu, Youming; Yu, Wenjie; Tan, Leng Seow; Yeo, Yee-Chia
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2014
- Field
- Engineering (Physical Sciences)