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This document presents a method for magnetic field imaging using a nanoarray of boron vacancy (V−B) defects in hexagonal boron nitride, demonstrating high spatial resolution and sensitivity for quantum materials research. The V−B sensors are precisely arranged using a helium ion microscope, allowing for visualization of magnetic fields induced by current in micro wires. The technique shows promise for applications in quantum sensing by enabling the accurate placement of sensors at the nanoscale.

Author

Néstor

Language

EN