About this scholarly article

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric by Lu, W.; Hammond, R.; Koester, S.J.; Wang, X.W.; Chu, J.O.; Ma, T.P.; Adesida, I. is a scholarly article available to read on EtoBox.

Author

Lu, W.; Hammond, R.; Koester, S.J.; Wang, X.W.; Chu, J.O.; Ma, T.P.; Adesida, I.

Publisher

IEEE

Published

1999