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Run-to-failure experiments were conducted on over 42 discrete power MOSFETs under thermal overstress conditions. The devices were power cycled to generate temperature gradients between low and high settings in a controlled manner. Slow aggregated voltage and current measurements were taken with a data acquisition system, while high-speed transient measurements were periodically captured with an oscilloscope. The experimental data for each device is stored in a consistent Matlab binary file format containing

Author

Beldi Makrem

Language

EN