Skip to content

Opening book details…

About this Engineering article

Enhanced breakdown voltages in strained InGaAs/GaAs structures by David, J. P. R.; Morley, M. J.; Wolstenholme, A. R.; Grey, R.; Pate, M. A.; Hill, G.; Rees, G. J.; Robson, P. N. is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
David, J. P. R.; Morley, M. J.; Wolstenholme, A. R.; Grey, R.; Pate, M. A.; Hill, G.; Rees, G. J.; Robson, P. N.
Publisher
American Institute of Physics; AIP Publishing (ISSN 0003-6951)
Published
1992
Language
EN
Field
Engineering (Physical Sciences)

More by David, J. P. R.; Morley, M. J.; Wolstenholme, A. R.; Grey, R.; Pate, M. A.; Hill, G.; Rees, G. J.; Robson, P. N.

Browse all works by David, J. P. R.; Morley, M. J.; Wolstenholme, A. R.; Grey, R.; Pate, M. A.; Hill, G.; Rees, G. J.; Robson, P. N.