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The paper investigates the electrical properties of Y-doped Hf–Zr–O thin films prepared via chemical solution deposition, highlighting that a Y concentration of 3.2% yields optimal ferroelectric properties after crystallization annealing at 800 °C under reduced pressure. Pre-annealing at lower temperatures (400 °C) is shown to enhance ferroelectric characteristics by promoting the formation of the orthorhombic phase. The study also examines the effects of Y concentration, crystallization pressure, and film

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peijiejiao925

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EN