Can I read Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism on EtoBox?

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism by Fangzhou Wang; Wanjun Chen; Xiaorui Xu; Ruize Sun; Zeheng Wang; Yun Xia; Yajie Xin; Chao Liu; Qi Zhou; Bo Zhang is a Engineering article available to read on EtoBox.

What is Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism about?

In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow switching loss. The device features a p-doped DCS layer in AlGaN buffer. When the DCS-HEMT is turning off, the net negative charges in the DCS layer significantly contribute to the depletion of 2-Delectron-gas (2DEG) channel, leading to low turn-off loss (E OFF ). During turn-on process, reduction of the negative charges amount could accelerate the formation of electrons at the 2DEG channel, which results in low turn-on loss (E ON ). Verified by the calibrated simulation, total switching loss (E SW = E OFF + E ON ) of the designed DCS-HEMT is 61% lower than that of the conventional p-GaN gate HEMT (C-HEMT). The improved performance makes the DCS-HEMT a competitive candidate for low switching loss power applications. Index Terms-Dynamic charge storage (DCS), highelectron-mobility transistor (HEMT), p-GaN gate, ultralow switching loss. ## I. INTRODUCTION G aN-BASED high-electron-mobility transistors (HEMTs) have gained considerable attention in the next-generation high-frequency and high-power switching applicat

Who reads Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism?

Author

Fangzhou Wang; Wanjun Chen; Xiaorui Xu; Ruize Sun; Zeheng Wang; Yun Xia; Yajie Xin; Chao Liu; Qi Zhou; Bo Zhang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published

2021

Language

EN

Field

Engineering (Physical Sciences)