Can I read LDMOS Performance Limits with Field Oxides on EtoBox?

LDMOS Performance Limits with Field Oxides by mohityadav1sep is a document available to read on EtoBox.

What is LDMOS Performance Limits with Field Oxides about?

This document investigates the performance limits of laterally diffused metal-oxide-semiconductor (LDMOS) transistors using three field oxide structures: LOCOS, step gate (SG), and shallow trench isolation (STI). A novel optimization algorithm is employed to evaluate the breakdown voltage and specific resistance, revealing that LOCOS outperforms the other structures in terms of power density figure-of-merit (FOM). The findings provide valuable insights for optimizing LDMOS technologies within the 30-50 V ra

Author

mohityadav1sep

Language

EN