Opening book details…
Can I read Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance on EtoBox?
Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance by Hiroshi Okada; Hideki Hasegawa is a Physics and Astronomy article available to read on EtoBox.
What is Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance about?
Basic transport and charge control characteristics of the Schottky in-plane gate (IPG) quantum wire transistor (QWTr) were investigated experimentally and theoretically as a possible key switching device in future high-density quantum integrated circuits. The fabricated QWTrs showed one-dimensional ballistic transport. From this, use of switching between zeroth and "rst conductance step was proposed for logic and memory application. Experimental and theoretical investigations were made on the threshold voltage and the steepness of the "rst quantized conductance step, and fairly good agreements were obtained between experiment and theory.
Who reads Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Hiroshi Okada; Hideki Hasegawa
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 1999
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)