About this scholarly article

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach by Gao, Fei; Balakumar, S.; Rui, Li; Lee, S.; Tung, Chib-hang; Du, Anyan; Sudhiranjan, T.; Hwang, W.s.; Balasubramanian, N.; Lo, Patrick; Dong-Zhi, Chi; Kwong, Dim-lee is a scholarly article available to read on EtoBox.

Author

Gao, Fei; Balakumar, S.; Rui, Li; Lee, S.; Tung, Chib-hang; Du, Anyan; Sudhiranjan, T.; Hwang, W.s.; Balasubramanian, N.; Lo, Patrick; Dong-Zhi, Chi; Kwong, Dim-lee

Publisher

IEEE

Published

2006