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Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2 by Gong, J. X.; Yang, J.; Ge, M.; Wang, Y. J.; Liang, D. D.; Luo, L.; Yan, X.; Zhen, W. L.; Weng, S. R.; Pi, L.; Zhang, C. J.; Zhu, W. K. is a scholarly article available to read on EtoBox.

What is Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2 about?

Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping which not only breaks the balance between electron-type and hole-type carrier densities but also reduces the average carrier mobility. Thus, compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.

Author

Gong, J. X.; Yang, J.; Ge, M.; Wang, Y. J.; Liang, D. D.; Luo, L.; Yan, X.; Zhen, W. L.; Weng, S. R.; Pi, L.; Zhang, C. J.; Zhu, W. K.

Published

2017

Language

EN