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About this Materials Science article
Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target by Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D.
- Publisher
- American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)
- Published
- 2013
- Field
- Materials Science (Physical Sciences)
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