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About this Engineering article
Growth and Characterization of Thick 4H-SiC Epilayers for Very High Voltage Bipolar Devices by Tsuchida, H.; Miyazawa, T.; Zhang, X.; Nagano, M.; Tanuma, R.; Kamata, I.; Ito, M. is a Engineering article available to read on EtoBox.
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- Author
- Tsuchida, H.; Miyazawa, T.; Zhang, X.; Nagano, M.; Tanuma, R.; Kamata, I.; Ito, M.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2013
- Field
- Engineering (Physical Sciences)