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The document provides technical specifications for a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor detector. It includes maximum ratings, electrical characteristics, typical performance curves, and packaging details for the optocoupler. Key specifications include a forward voltage of 1.23-1.5V for the LED, a collector-emitter dark current of 1-50nA for the phototransistor, and an isolation voltage rating of 7500V peak AC.

Author

ivaan0910

Language

EN