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Phonon polariton modes in porous III–V semiconductors by K. S. Joseph Wilson; K. Navaneethakrishnan is a Physics and Astronomy article available to read on EtoBox.
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## Abstract The phonon polariton modes in the bulk porous III–V semiconductor materials like GaP and GaAs are investigated for different porosity values. Their behavior under an external hydrostatic pressure is also studied. The frequencies of the various modes shift to higher values. The model has been extended to the case of self assembled GaP quantum dots (QDOTs) in GaAs matrix. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- K. S. Joseph Wilson; K. Navaneethakrishnan
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 2005
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)