Opening book details…
About this scholarly article
1986 International Electron Devices Meeting - Fabrication and modeling of a novel self-Aligned AlGaAs/GaAs heterojunction bipolar transistor with a cutoff frequency of 45 GHz by Madihian, M.; Honjo, K.; Toyoshima, H.; Kumashiro, S. is a scholarly article available to read on EtoBox.
- Author
- Madihian, M.; Honjo, K.; Toyoshima, H.; Kumashiro, S.
- Publisher
- IRE
- Published
- 1986
- Language
- EN
More by Madihian, M.; Honjo, K.; Toyoshima, H.; Kumashiro, S.
Browse all works by Madihian, M.; Honjo, K.; Toyoshima, H.; Kumashiro, S.