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What is 2SK2961 MOSFET Datasheet Overview about?

This document provides specifications for the Toshiba 2SK2961 field effect transistor. Key specifications include: - Low drain-source ON resistance of 0.2 ohms typical - High forward transfer admittance of 2.0 Siemens typical - Enhancement mode with threshold voltage between 0.8-2.0 volts The document provides detailed maximum ratings, thermal characteristics, electrical characteristics, and switching time specifications for the transistor. Application areas include relay drive, motor drive, and DC-DC co

Author

HenryAmayaLarreal

Language

EN