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Can I read Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization (Volume 46) (Semiconductors and Semimetals, Volume 46) on EtoBox?
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization (Volume 46) (Semiconductors and Semimetals, Volume 46) by Constantinos Christofides and Gérard Ghibaudo (Eds.) is a engineering available to read on EtoBox.
What is Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization (Volume 46) (Semiconductors and Semimetals, Volume 46) about?
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of
Who reads Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization (Volume 46) (Semiconductors and Semimetals, Volume 46)?
It is typically read by working professionals who need an authoritative practice reference.
Common subject areas: medicine, law, business, engineering.
- Author
- Constantinos Christofides and Gérard Ghibaudo (Eds.)
- Publisher
- Academic Press, Incorporated
- Published
- 1997
- Language
- EN
- ISBN
- 9780127521459
- Category
- engineering
- Subjects
- Engineering, Mathematics, Science
- Updated
- 2026-03-25
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