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Yttrium Oxide Semiconductor Patent by Abdul Muheem is a document available to read on EtoBox.
What is Yttrium Oxide Semiconductor Patent about?
The document describes a patent for a component and semiconductor manufacturing device developed by Kyocera Corporation, focusing on a film containing polycrystalline yttrium oxide. The patent outlines the specific X-ray diffraction characteristics of the film, emphasizing the ratio of monoclinic to cubic yttrium oxide to enhance plasma resistance in semiconductor applications. The invention aims to improve the plasma resistance of the component by increasing the proportion of cubic yttrium oxide, thereby r
- Author
- Abdul Muheem
- Language
- EN