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About this Engineering article
High quality SiO/sub 2//Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere by Sano, N.; Sekiya, M.; Hara, M.; Kohno, A.; Sameshima, T. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Sano, N.; Sekiya, M.; Hara, M.; Kohno, A.; Sameshima, T.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)
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