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About this Engineering article
Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles by Lorenzini, M.; Haspeslagh, L.; Van Houdt, J.; Maes, H. E. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lorenzini, M.; Haspeslagh, L.; Van Houdt, J.; Maes, H. E.
- Publisher
- Hindawi Publishing Corporation; Hindawi Limited; Lausanne: Gordon and Breach Publishing Group; London: Hindawi (ISSN 1065-514X)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)
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