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Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization by C. Leyris; F. Martinez; M. Valenza; A. Hoffmann; J.C. Vildeuil is a Engineering article available to read on EtoBox.

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This paper presents the electrical characterization of thick and thin SiO 2 oxynitride performed by thermal and plasma nitridation processes. The impact of the nitridation technique is investigated using random telegraph signal (RTS) noise analysis. The variation of the gate oxide trap characteristics is determined with respect to the nitridation technique. Significant properties of traps are also pointed out. Main trap parameters, such as their depth with respect to the interface, nature, capture and emission times are extracted. These results illustrate the potential of RTS noise investigation for gate oxide characterizations.

Who reads Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization?

Author

C. Leyris; F. Martinez; M. Valenza; A. Hoffmann; J.C. Vildeuil

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)